Study of the Ion Radiation Influence on the Parameters of Unijunction Transistors

Authors

  • Nikolaj Nenov Technical University of Gabrovo (BG)
  • Petar Tomchev Technical University of Gabrovo (BG)
  • Rayna Ivanova Technical University of Gabrovo (BG)

DOI:

https://doi.org/10.17770/etr2013vol2.860

Keywords:

ionizing radiation, gamma quanta, unijunction transistor, volt-ampere characteristic

Abstract

The object of this report is study the influence of gamma quanta on some parameters of the unijunction transistors to synthesize radioisotope equipment.

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References

Пугачев А.В., Е.В.Сахаров. Справочник по радиоизотопной автоматике.”Энергия”, Москва, 1974г.

Мишев И.Т. Основи на съвременната радиационна дозиметрия.”Техника”,София, 1971

Ненов.Н.Х. Учебно-методично ръководство за лабораторни упражнения по индустриална електроника. „ЕКС-ПРЕС”,Габрово,2010г.

Petrova D., Fabrication Technologies and Economic Aspects for Components in Microtechnology, VII International scientific conference “Management and engineering’09” Sozopol, 22-24.06 2009, TU - Sofia, XVII, 3/113, June 2009, ISSN–1310–3946, pp. 306-312.

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Published

2015-08-08

Issue

Vol. 2 (2013): Environment. Technology. Resources. Proceedings of the 9th International Scientific and Practical Conference. Volume 2

Section

VI Electrical Drive, Electrotechnics, Electronics and Mechatronics

How to Cite

[1]
N. Nenov, P. Tomchev, and R. Ivanova, “Study of the Ion Radiation Influence on the Parameters of Unijunction Transistors”, ETR, vol. 2, pp. 137–139, Aug. 2015, doi: 10.17770/etr2013vol2.860.