Technology for Obtaining Cu2ZnSnSe4 Thin Films
DOI:
https://doi.org/10.17770/etr2013vol2.859Keywords:
semiconductor, Cu2ZnSnSe4, thermal annealingAbstract
Cu2ZnSnSe4 thin films were obtained by sequential deposition of basic elements (Sn, Se, Zn, Cu) on a glass substrate. The thickness of each layer was selected to achieve 2:1:1:4 stoichiometric ratio for copper, zinc, tin and selenium, respectively. To obtain compound Cu2ZnSnSe4 samples were annealed at temperature range of 1500C to 4000C. Surface of samples were investigated using scanning electron microscope. Analysis of chemical composition and x-ray diffractometry was performed before and after annealing of samples.Downloads
References
Altomare A., J. Appl. Crystallogr. 42 119. 2009.
Chaliha S., Borah M.N., Sarmah P.C., Rahman A.. J. Optoelectron. Advanc. Mater. 10, 427. 2008.
Deshpande M.P., Chaki S.H., Patel N.H., J. Nano- Electron. Phys. 1, 193. 2011.
Green M.A., Emery K., Hishikawa Y., Warta W., Prog.Photovolt.: Res. Appl., 18, 346. 2010.
Hariskos D., Spiering S., Powalla M., J. Thin Solid Films. 480, 99. 2005.
Kauk-Kuusik M., Altosaar M., Muska K., Pilvet M., Raudoja J., Timmo K., Varema T., Grossberg M.,. Mellikov E, Volobujeva O. Post-growth annealing effect on the performance of Cu2ZnSnSe4 monograin layer solar cells. J. Thin Solid Films, Tallin 2013.
Poortmans J., Arkhipov V., Thin Film Solar Cells: Fabrication, Characterization and Application. Leuven, Belgium:John Wiley & Sons, Ltd. IMEC: 2006.
Rusu G.I., Popa M.E., Rusu G.G., Iulia Salaoru, Appl. Surf. Sci. 218, 223. 2003.
Venkatachalam S., Mangalaraj D., Narayandass Sa.K., Vacuum 81, 928. 2007.
