Study of the Ion Radiation Influence on the Parameters of Unijunction Transistors

Nikolaj Nenov, Petar Tomchev, Rayna Ivanova

Abstract


The object of this report is study the influence of gamma quanta on some parameters of the unijunction transistors to synthesize radioisotope equipment.

Keywords


ionizing radiation; gamma quanta; unijunction transistor; volt-ampere characteristic

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References


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DOI: http://dx.doi.org/10.17770/etr2013vol2.860

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